900v 36a apt36n90bc3g* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings per die: t c = 25c unless otherwise speci ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) drain-source on-state resistance 3 (v gs = 10v, i d = 18a) zero gate voltage drain current (v ds = 900v, v gs = 0v) zero gate voltage drain current (v ds = 900v, v gs = 0v, t c = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.9ma) symbol v dss i d i dm v gs p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage continuous total power dissipation @ t c = 25c operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 400v, i d = 36a, t j = 125c) avalanche current 2 repetitive avalanche energy 2 ( id = 8.8a, vdd = 50v ) single pulse avalanche energy ( id = 8.8a, vdd = 50v ) unit volts amps volts watts c v/ns amps mj static electrical characteristics symbol bv (dss) r ds(on) i dss i gss v gs(th) unit volts ohms a na volts apt36n90bc3g 900 36 23 96 20 390 -55 to 150 260 50 8.8 2.9 1940 ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated ? dual die (parallel) ? popular t-max package super junction mosfet min typ max 900 0.10 0.12 - - 100 - 50 - - - 100 2.5 3 3.5 c power semiconductors o o l mos "coolmos? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag." g d s unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made with two parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. microsemi website - http://www.microsemi.com 050-8068 rev b 12-2010 to-247 d 3
apt36n90bc3g source-drain diode ratings and characteristics thermal characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 3 (v gs = 0v, i s = 18a) peak diode recovery dv / dt 6 reverse recovery time (i s = -36a, di / dt = 100a/ s) reverse recovery charge (i s = -36a, di / dt = 100a/ s) peak recovery current (i s = -36a, di / dt = 100a/ s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 36 96 0.8 1.2 10 930 1230 35 44 70 68 symbol r jc r ja min typ max 0.3 31 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. 3 pulse test: pulse width < 380 s, duty cycle < 2% microsemi reserves the right to change, without notice, the speci cations and information contained herein. t j = 25c t j = 125c t j = 25c t j = 125c t j = 25c t j = 125c symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 4 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 5 turn-off switching energy turn-on switching energy 5 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 450v i d = 36a @ 25c inductive switching v gs = 15v v dd = 600v i d = 36a @ 25c r g = 4.3 inductive switching @ 25c v dd = 600v, v gs = 15v i d = 36a, r g = 4.3 inductive switching @ 125c v dd = 600v, v gs = 15v i d = 36a, r g = 4.3 4 see mil-std-750 method 3471 5 eon includes diode reverse recovery. 6 maximum 125c diode commutation speed = di/dt 600a/ s min typ max 7463 6827 167 252 38 112 70 20 400 25 1500 750 2130 867 unit pf nc ns j 050-8068 rev b 12-2010 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 10 -5 10 -4 10 -3 10 -2 0.1 10 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note:
050-8068 rev b 12-2010 typical performance curves apt36n90bc3g 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 25 50 75 100 125 150 0.90 0.95 1 1.05 1.10 1.15 1.20 0 25 50 75 100 125 150 0.8 0.9 1 1.0 1.2 1.3 1.4 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 v gs = 20v t j = 25c t j = -55c t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current i dr , reverse t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 47a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 0 20 40 60 80 100 120 0 5 10 15 20 25 30 6.5v 4v 10 &15v v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) 4.5v 5.5v 5v 1 10 100 300 1 10 100 1000 1ms 100ms dc line 100 s 10ms 10 s
050-8068 rev b 12-2010 typical performance curves 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 1 10 100 300 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 200 250 300 350 0 10 20 30 40 50 60 0 2 4 6 8 10 12 0 50 100 150 200 250 300 10 100 1,000 10,000 60,000 0 10 20 30 40 50 c iss t j = =25c v ds = 720v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 450v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 40 50 60 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 94a v dd = 600v r g = 4.3 t j = 125c l = 100 h t d(on) t d(off) v dd = 600v r g = 4.3 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 600v r g = 4.3 t j = 125c l = 100 h t r t f e on e off v dd = 600v i d = 36a t j = 125c l = 100 h e on includes diode reverse recovery. apt36n90bc3g v ds = 180v
050-8068 rev b 12-2010 to-247 ? package outline figure 17, turn-on switching waveforms and de nitions figure 18, turn-off switching waveforms and de nitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g typical performance curves apt36n90bc3g 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% figure 19, inductive switching test circuit
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